Complementary resistive switching in core–shell nanowires

Highly dense, energy-efficient, and fast neuromorphic architectures emulating the computational abilities of brain use memristors to emulate synapses in analog or digital systems. Core–shell nanowires provide us with new opportunities for hardware integration. In this work, we have fabricated core–shell using a combination bottom-up top-down techniques. Additionally, demonstrated eightwise counter-eightwise bipolar resistive switching (BRS). Remarkably, first time along BRS, also complementary (CRS) nanowires. Here, Pt was used as conductive core HfO2 memristive shell Ti top electrode. The properties were characterized by I–V curves pulse operation modes. cycling endurance BRS mode 1000 cycles an off–on ratio ∼13 resistance retained 104 s. compliance current form nanowire influenced CRS lowering peak operating current. density–electric field analysis performed determine charge conduction mechanisms revealed that wires exhibit thermionic emission mechanism high state Ohmic low during hopping 0 space-charge-limited 1 operation. This observed versatility makes significant interest synaptic elements network architectures.